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MA02305AK Dataheets PDF



Part Number MA02305AK
Manufacturers Tyco
Logo Tyco
Description 3.0 V 100 mW RF Power Amplifier IC for Bluetooth
Datasheet MA02305AK DatasheetMA02305AK Datasheet (PDF)

3.0 V 100 mW RF Power Amplifier IC for Bluetooth V 1.00 MA02305AK Features n 20 dB Gain – dramatically increases range of your low MA02305AK power Bluetooth devices n Single 3.0V positive supply – operates over a wide range of supply voltages n Extremely small size – 6 pin SOT plastic package n n n n n 3 mm x 1.75 mm body size Output power easily controllable via VDD1 45% Power Added Efficiency 100% Duty Cycle 2000 to 2900 MHz Operation Self-Aligned MSAG®-Lite MESFET Process Description .

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3.0 V 100 mW RF Power Amplifier IC for Bluetooth V 1.00 MA02305AK Features n 20 dB Gain – dramatically increases range of your low MA02305AK power Bluetooth devices n Single 3.0V positive supply – operates over a wide range of supply voltages n Extremely small size – 6 pin SOT plastic package n n n n n 3 mm x 1.75 mm body size Output power easily controllable via VDD1 45% Power Added Efficiency 100% Duty Cycle 2000 to 2900 MHz Operation Self-Aligned MSAG®-Lite MESFET Process Description The MA02305AK is an RF power amplifier based on M/ACOM’s Self-Aligned MSAG® MESFET Process. This product is designed for use in 2.4 GHz ISM products as a booster for high power Bluetooth devices. Output power can be controlled to meet Bluetooth requirements via varying input power or the voltage on VDD1. Maximum Ratings Rating DC Supply Voltage (TA = 25°C unless otherwise noted) Symbol V DD PIN TJ TSTG Value 5.5 10 150 -40 to +150 Unit V mW °C °C Ordering Information Part Number MA02305AK-R7 MA02305AK-SMB Package 7 inch, 3000 Piece Reel MA02305AK Test Board RF Input Power Junction Temperature Storage Temperature Range Electrical Characteristics: Characteristic VDD1 = 2.5 V, VDD2 = 3 V, PIN = +0 dBm, Duty Cycle = 100%, T A = 25°C Symbol ƒ POUT η 2ƒ 3ƒ S21 RT H Min 2400 18.7 40 20 45 -30 -27 1.5 -25 180 -26 -22 2.0 Typ Max 2500 Unit MHz dBm % dBc :1 dB °C/W Frequency Range Output Power f = 2450 MHz Power Added Efficiency f = 2450 MHz Harmonics Input VSWR Off Isolation (VDD=0 V) Thermal Resistance, junction to soldering point (pin 2) Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm) Stability (PIN = 0dBm, V DD = 0-5.5 V, Load VSWR = 5:1, fixed phases) No Degradation in Power Output All non-harmonically related outputs more than 60 dB below desired signal 3.0 V 100 mW RF Power Amplifier IC for Bluetooth Typical Performance Curves Output Power, Drain Currents, and Efficiency vs. Frequency V DD2 = 3 V , VDD1 = 2.5 V, PIN = 0 dBm 50 40 30 20 10 0 2300 2350 2400 2450 2500 2550 2600 Pout MA02305AK V 1.00 Output Power, Drain Currents and Efficiency vs. Input Power V DD2 = 3 V , ƒ = 2450 MHz, V DD1 = 2.5V Pout (dBm), PAE (%) Pout (dBm), PAE (%) 65 45 35 25 15 5 Id1, Id2 (mA) 55 50 40 30 20 10 0 -15 -10 -5 0 5 100 80 60 40 20 0 Pout PAE Id1 Id2 Frequency (MHz) PAE Id1 Id2 Input Power (dBm) Output Power, Drain Currents and Efficiency vs. Supply Voltage PIN = 0 dBm , ƒ = 2450 MHz, VDD1 = 2.5 V 50 40 30 20 10 0 0 1 2 3 4 5 100 Output Power, Drain Currents and Efficiency vs. V DD1 for Power Control PIN = 0 dBm , ƒ = 2450 MHz, VDD2 = 3 V 60 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Pout PAE Id1 Id2 Pout (dBm), PAE (%) Pout (dBm), PAE (%) Id1, Id2 (mA) 80 60 40 20 0 50 40 30 20 10 0 -10 Pout PAE Id1 Id2 VD2 (volts) VD1 (volts) Harmonics PIN = 0 dBm , ƒ 0 = 2450 MHz, V DD1 = 2.5V, VDD2 = 3V Output Power, Input Return Loss and Efficiency vs. Temperature PIN = 0 dBm , ƒ = 2450 MHz, VDD1 = 2.5 V, VDD2 = 3 V Output Power (dBm) 10 0 -10 -20 -30 -40 fo 2fo 3fo 4fo 5fo Pout (dBm), PAE (%) 50 40 30 20 10 -40 25 80 -10 -15 -20 -25 -30 Temperature (C) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. Input Return Loss (dB) Pout PAE IRL 20 Id1, Id2 (mA) Id1, Id2 (mA) 3.0 V 100 mW RF Power Amplifier IC for Bluetooth Mechanical Data MA02305AK V 1.00 C1 C4 C2 C5 C6 L1 R1 L2 C3 Component layout and printed circuit drawing for evaluation board. Application Information List of Components for MA02305AK: Part C1 C2 C3 C4 C5 C6 R1 L1 L2 Value 100 pF 100 pF 100 pF 4700 pF 1.5 pF 0.5 pF 210 Ohm 2.7 nH 22 nH Manufacturer Dielectric Labs Murata Murata Murata Dielectric Labs Dielectric Labs Panasonic Toko Coilcraft Size 0805 0603 0603 0603 0603 0805 0603 0603 0603 Part Number C11AH101K8TXL GRM39C0G101J050AD GRM39C0G101J050AD GRM39X7R471K C06CF1R5B5UL C11AH0R5B8TXL ERJ-3EKF2100 LL1608-F2N7S 0603HC-22NXJBU Vdd2 C4 Vdd1 0.18 C1 L2 0.27* 0.15* 4 5 3 C3 RFout 0.05* 2 1 RFin C2 0.26 L1 0.12 6 C6 C5 Vgg1 R1 Vgg2 0.28* Evaluation Board Schematic. 50 Ω transmission line lengths in inches based on 10 mil thick, FR4. Critical line lengths denoted with (*). Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 3.0 V 100 mW RF Power Amplifier IC for Bluetooth Designing With the MA02305AK MA02305AK V 1.00 The MA02305AK is built using a near-enhancement mode FET that operates from a single supply voltage. A negative voltage is not required because the FET is designed to operate with a +0V DC gate bias. There is no impedance matching or RF choking on this I.


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