MA111

Switching Diodes MA2J111 (MA111) Silicon epitaxial planar type For switching circuits I Features Small S-mini type package, allowing high-density mounting Short reverse recovery time trr Small terminal capacitance, Ct High breakdown voltage (VR = 80 V) I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* VR VRM IF(AV) IFM IFSM 80 80 100 225 500 Junction temperature Storage temperature Note) * : t = 1 s Tj 150 Tstg −55 to +150 Unit V V mA mA mA °C °C 1.25±0.1 0.35±0.1 Unit : mm 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 2 0.5±0.1 5° 0.16+–00..016 0.4±0.1 0 to 0.1 5° (0.15) 1 : Anode 2 : Cathode SMini2-F1 Package Marking Symbol: 1B I Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reve...