DatasheetsPDF.com

PHB18NQ10T Dataheets PDF



Part Number PHB18NQ10T
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS transistor
Datasheet PHB18NQ10T DatasheetPHB18NQ10T Datasheet (PDF)

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP18NQ10.

  PHB18NQ10T   PHB18NQ10T


PHB160N03T PHB18NQ10T PHB18NQ20T


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)