Silicon epitaxial planar type Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3X158 (MA158)
Productnnu 0
Silicon ...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3X158 (MA158)
Productnnu 0
Silicon epitaxial planar type
For small power rectification and surge absorption
■ Features
High reverse voltage VR Large forward current (Average) IF(AV) Automatic mounting is possible
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
VR VRRM VRSM
200 250 300
Output current Repetitive peak forward current
Non-repetitive peak forward surge current*
IO IFRM IFSM
100 225 500
Junction temperature Storage temperature
Tj 125 Tstg −55 to +125
Note) *: t = 1 s
Unit V V V
mA mA mA
°C °C
toli0.1feca1.1–+00..12ycleen 1.1–+00..13
stage.dc
(0.65)e
1.50–+00..0255/ 2.8–+00..32 5˚ 0.4±0.2
0.40+–00..0150 3
12 (0.95) (0.95)
1.9±0.1 2.90+–00..0250 10˚
Unit: mm
0.16+–00..0160
EIAJ: SC-59
1: Anode 2: N.C. 3: Cathode Mini3-G1 Package
Ma...
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