Silicon epitaxial planar type
Switching Diodes
MA27111
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits ■ Features
• High-de...
Description
Switching Diodes
MA27111
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits ■ Features
High-density mounting is possible Short reverse recovery time trr Small terminal capacitance Ct
0.27+0.05 –0.02 2 1.00±0.05 1.40±0.05
0.13+0.05 –0.02
1 0.60±0.05 0.15 min.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C
5°
5°
0 to 0.01
1: Anode 2: Cathode SSSMini2-F2 Package
Marking Symbol: S
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IR = 100 µA VR = 75 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω 0.6 Conditions IF = 100 mA 80 100 2.0 3 nA pF ns Min Typ 0.95 Max 1.20 Unit V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0.15 max.
0.52±0.03
0.15 ...
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