Silicon epitaxial planar type
Switching Diodes
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits I Features
• ...
Description
Switching Diodes
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits I Features
Short reverse recovery time trr Small terminal capacitance, Ct
COLORED BAND INDICATES CATHODE φ 0.56 max. 1
24 min.
Unit : mm
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage MA2B150 (DC) MA2B161 MA2B162 MA2B162A Repetitive peak MA2B150 reverse voltage MA2B161 MA2B162 MA2B162A Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR Rating 35 50 75 120 35 50 75 120 100 225 500 200 −55 to +150 Unit V
1st Band 2nd Band
VRRM
V
2 φ 1.95 max.
IF(AV) IFRM IFSM Tj Tstg
mA mA mA °C °C
1 : Cathode 2 : Anode JEDEC : DO-35
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA2B150 MA2B161 MA2B162 MA2B162A MA2B150 MA2B161 MA2B162 MA2B162A Forward voltage (DC) Reverse voltage (DC) Terminal capacitance MA2B150 VF VR Ct trr Symbol IR Conditions VR = 15 V VR = 30 V VR = 15 V VR = 50 V VR = 20 V VR = 75 V VR = 20 V VR = 120 V VR = 35 V, Ta = 150°C VR = 50 V, Ta = 150°C VR = 75 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 100 mA IR = 5 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V, RL = 100 Ω Measure when Irr = 0.1 · IR 2.2 Min Typ Max 0.025 0.1 0.025 5 0.025 5 0.025 5 100 100 100 100 1.2 2 10 4 Unit µA
0.012 0.012
50 50 0.95 35 0.9
24 min.
4.5 max.
V V pF ns
Reverse recovery time* MA2B150 MA2B161/162/162A
I Cathode Indic...
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