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MA2B162

Panasonic

Silicon epitaxial planar type

Switching Diodes MA2B150, MA2B161, MA2B162, MA2B162A Silicon epitaxial planar type For switching circuits I Features • ...


Panasonic

MA2B162

File Download Download MA2B162 Datasheet


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Switching Diodes MA2B150, MA2B161, MA2B162, MA2B162A Silicon epitaxial planar type For switching circuits I Features Short reverse recovery time trr Small terminal capacitance, Ct COLORED BAND INDICATES CATHODE φ 0.56 max. 1 24 min. Unit : mm I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage MA2B150 (DC) MA2B161 MA2B162 MA2B162A Repetitive peak MA2B150 reverse voltage MA2B161 MA2B162 MA2B162A Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR Rating 35 50 75 120 35 50 75 120 100 225 500 200 −55 to +150 Unit V 1st Band 2nd Band VRRM V 2 φ 1.95 max. IF(AV) IFRM IFSM Tj Tstg mA mA mA °C °C 1 : Cathode 2 : Anode JEDEC : DO-35 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) MA2B150 MA2B161 MA2B162 MA2B162A MA2B150 MA2B161 MA2B162 MA2B162A Forward voltage (DC) Reverse voltage (DC) Terminal capacitance MA2B150 VF VR Ct trr Symbol IR Conditions VR = 15 V VR = 30 V VR = 15 V VR = 50 V VR = 20 V VR = 75 V VR = 20 V VR = 120 V VR = 35 V, Ta = 150°C VR = 50 V, Ta = 150°C VR = 75 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 100 mA IR = 5 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V, RL = 100 Ω Measure when Irr = 0.1 · IR 2.2 Min Typ Max 0.025 0.1 0.025 5 0.025 5 0.025 5 100 100 100 100 1.2 2 10 4 Unit µA 0.012 0.012 50 50 0.95 35 0.9 24 min. 4.5 max. V V pF ns Reverse recovery time* MA2B150 MA2B161/162/162A I Cathode Indic...




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