Document
Switching Diodes
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits I Features
• Short reverse recovery time trr • Small terminal capacitance, Ct
COLORED BAND INDICATES CATHODE φ 0.56 max. 1
24 min.
Unit : mm
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage MA2B150 (DC) MA2B161 MA2B162 MA2B162A Repetitive peak MA2B150 reverse voltage MA2B161 MA2B162 MA2B162A Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR Rating 35 50 75 120 35 50 75 120 100 225 500 200 −55 to +150 Unit V
1st Band 2nd Band
VRRM
V
2 φ 1.95 max.
IF(AV) IFRM IFSM Tj Tstg
mA mA mA °C °C
1 : Cathode 2 : Anode JEDEC : DO-35
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA2B150 MA2B161 MA2B162 MA2B162A MA2B150 MA2B161 MA2B162 MA2B162A Forward voltage (DC) Reverse voltage (DC) Terminal capacitance MA2B150 VF VR Ct trr Symbol IR Conditions VR = 15 V VR = 30 V VR = 15 V VR = 50 V VR = 20 V VR = 75 V VR = 20 V VR = 120 V VR = 35 V, Ta = 150°C VR = 50 V, Ta = 150°C VR = 75 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 100 mA IR = 5 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V, RL = 100 Ω Measure when Irr = 0.1 · IR 2.2 Min Typ Max 0.025 0.1 0.025 5 0.025 5 0.025 5 100 100 100 100 1.2 2 10 4 Unit µA
0.012 0.012
50 50 0.95 35 0.9
24 min.
4.5 max.
V V pF ns
Reverse recovery time* MA2B150 MA2B161/162/162A
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2B150 MA2B161 White Green MA2B162 MA2B162A Violet Black Black
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
1
MA2B150, MA2B161, MA2B162, MA2B162A
Switching Diodes
IF V F
103
Bias Application Unit N-50BU tr
Input Pulse tp 10% t IF
Output Pulse
102
trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω
Forward current IF (mA)
10
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
1
Ta = 150°C 75°C 25°C − 20°C
10−1
trr measuring circuit
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
IR VR
102 MA2B150 Ta = 150°C 10
10 102 MA2B161 MA2B162 MA2B162A
IR V R
1.0 Ta = 150°C 0.8
100°C 1
VF Ta
Reverse current IR (µA)
Reverse current IR (µA)
100°C 1
Forward voltage VF (V)
IF = 20 mA 0.6 10 mA 0.4 1 mA
10−1 25°C
10−1 25°C 10−2
10−2
0.2
0.1 mA 0.01 mA
10−3
10−3
0
10
20
30
40
0
20
40
60
80
100
0 −40
0
40
80
120
160
200
Reverse voltage VR (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR Ta
102 MA2B150 VR = 35 V
IR T a
102 MA2B161 MA2B162 MA2B162A VR = 120 V 75 V 50 V 20 V
Ct VR
2.0 f = 1 MHz Ta = 25°C
Terminal capacitance Ct (pF)
10
Reverse current IR (µA)
Reverse current IR (µA)
15 V
10
1.6
1
1
1.2
MA2B150 MA2B161, MA2B162, MA2B162A
10−1
10−1
0.8
10−2
10−2
0.4
10−3
0
40
80
120
160
200
10−3
0
0 40 80 120 160 200
0
4
8
12
16
20
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
2
.