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MA2B162A Dataheets PDF



Part Number MA2B162A
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA2B162A DatasheetMA2B162A Datasheet (PDF)

Switching Diodes MA2B150, MA2B161, MA2B162, MA2B162A Silicon epitaxial planar type For switching circuits I Features • Short reverse recovery time trr • Small terminal capacitance, Ct COLORED BAND INDICATES CATHODE φ 0.56 max. 1 24 min. Unit : mm I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage MA2B150 (DC) MA2B161 MA2B162 MA2B162A Repetitive peak MA2B150 reverse voltage MA2B161 MA2B162 MA2B162A Average forward current Repetitive peak forward current Non-repetitive peak forward .

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Switching Diodes MA2B150, MA2B161, MA2B162, MA2B162A Silicon epitaxial planar type For switching circuits I Features • Short reverse recovery time trr • Small terminal capacitance, Ct COLORED BAND INDICATES CATHODE φ 0.56 max. 1 24 min. Unit : mm I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage MA2B150 (DC) MA2B161 MA2B162 MA2B162A Repetitive peak MA2B150 reverse voltage MA2B161 MA2B162 MA2B162A Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR Rating 35 50 75 120 35 50 75 120 100 225 500 200 −55 to +150 Unit V 1st Band 2nd Band VRRM V 2 φ 1.95 max. IF(AV) IFRM IFSM Tj Tstg mA mA mA °C °C 1 : Cathode 2 : Anode JEDEC : DO-35 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) MA2B150 MA2B161 MA2B162 MA2B162A MA2B150 MA2B161 MA2B162 MA2B162A Forward voltage (DC) Reverse voltage (DC) Terminal capacitance MA2B150 VF VR Ct trr Symbol IR Conditions VR = 15 V VR = 30 V VR = 15 V VR = 50 V VR = 20 V VR = 75 V VR = 20 V VR = 120 V VR = 35 V, Ta = 150°C VR = 50 V, Ta = 150°C VR = 75 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 100 mA IR = 5 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V, RL = 100 Ω Measure when Irr = 0.1 · IR 2.2 Min Typ Max 0.025 0.1 0.025 5 0.025 5 0.025 5 100 100 100 100 1.2 2 10 4 Unit µA 0.012 0.012 50 50 0.95 35 0.9 24 min. 4.5 max. V V pF ns Reverse recovery time* MA2B150 MA2B161/162/162A I Cathode Indication Type No. Color 1st Band 2nd Band MA2B150 MA2B161 White  Green  MA2B162 MA2B162A Violet  Black Black Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit 1 MA2B150, MA2B161, MA2B162, MA2B162A Switching Diodes IF  V F 103 Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse 102 trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Forward current IF (mA) 10 A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 1 Ta = 150°C 75°C 25°C − 20°C 10−1 trr measuring circuit 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) IR  VR 102 MA2B150 Ta = 150°C 10 10 102 MA2B161 MA2B162 MA2B162A IR  V R 1.0 Ta = 150°C 0.8 100°C 1 VF  Ta Reverse current IR (µA) Reverse current IR (µA) 100°C 1 Forward voltage VF (V) IF = 20 mA 0.6 10 mA 0.4 1 mA 10−1 25°C 10−1 25°C 10−2 10−2 0.2 0.1 mA 0.01 mA 10−3 10−3 0 10 20 30 40 0 20 40 60 80 100 0 −40 0 40 80 120 160 200 Reverse voltage VR (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  Ta 102 MA2B150 VR = 35 V IR  T a 102 MA2B161 MA2B162 MA2B162A VR = 120 V 75 V 50 V 20 V Ct  VR 2.0 f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) 10 Reverse current IR (µA) Reverse current IR (µA) 15 V 10 1.6 1 1 1.2 MA2B150 MA2B161, MA2B162, MA2B162A 10−1 10−1 0.8 10−2 10−2 0.4 10−3 0 40 80 120 160 200 10−3 0 0 40 80 120 160 200 0 4 8 12 16 20 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Reverse voltage VR (V) 2 .


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