Silicon epitaxial planar type
Switching Diodes
MA2B170, MA2B171
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits I Features...
Description
Switching Diodes
MA2B170, MA2B171
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits I Features
Large forward current IF(AV) High switching speed Small terminal capacitance, Ct
COLORED BAND INDICATES CATHODE
φ 0.56 max. 1
24 min.
1st Band 2nd Band
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2B170 MA2B171 MA2B170 MA2B171 IF(AV) IFRM IFSM Tj Tstg VRRM Symbol VR Rating 40 80 40 80 200 600 1 200 −55 to +200 mA mA A °C °C V
2 φ 1.95 max.
Unit V
24 min.
Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s
1 : Cathode 2 : Anode JEDEC : DO-35
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA2B170 MA2B171 MA2B170 MA2B171 MA2B170 MA2B171 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr IR IR2 VR = 35 V VR = 75 V VR = 35 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 200 mA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω Output Pulse
Symbol IR1 VR = 15 V
Conditions
Min
Typ
Max 50
4.5 max.
Unit nA
500 500 100 100 1.1 4 20
nA µA V pF ns
Note) 1. Rated input/output frequency: 100 MHz
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2B170 MA2B171 Violet White Violet Green
A
VR P...
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