Silicon epitaxial planar type Switching Diodes
Switching Diodes
MA2C178, MA2C179
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
φ 0.45 max...
Description
Switching Diodes
MA2C178, MA2C179
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
φ 0.45 max.
I Absolute Maximum Ratings Ta = 25°C
0.2 max.
Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2C178 MA2C179 MA2C178 MA2C179
Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg
Rating 40 80 40 80 200 600 1 200 −55 to +200
Unit V
2
V
φ 1.75 max.
Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s
mA mA A °C °C
1 : Cathode 2 : Anode JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA2C178 MA2C179 MA2C178 MA2C179 MA2C178 MA2C179 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr IR IR2 VR = 35 V VR = 75 V VR = 35 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 200 mA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 500 500 100 100 1.1 4 20 V pF ns µA nA Symbol IR1 VR = 15 V Conditions Min Typ Max 50 Unit nA
Note) 1. Rated input/output frequency: 50 MHz 2. * : trr measuring circuit
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2C178 MA2C179 Violet White Violet Green
13 min.
2.2 ± 0.3
Large forward current IFRM High switching speed Small terminal capacitance, Ct
1st Band 2nd Band
0.2 max.
13 min.
I Features
COLORED BAND INDICATES CATHODE
1
1
MA2C178, MA2C179
Switching Diodes
Common characteristics charts IF V F
103
Bias Application Unit N-5...
Similar Datasheet