MA2C700A

Schottky Barrier Diodes (SBD) MA2C700, MA2C700A Silicon epitaxial planar type Unit : mm For ordinary wave detection For super high speed switching COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. 13 min. I Features Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) Small temperature coefficient of forward characteristic Extremely low reverse current IR DO-34(DHD) envelope, allowing to insert to a 5 mm pitch hole 1st Band 2nd Band 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage MA2C700 MA2C700A MA2C700 MA2C700A IFM IF Tj Tstg VRM Symbol VR Rating 15 30 15 30 150 30 125 −55 to +125 mA mA °C °C V Unit V 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 Peak forward current Forward current (DC) Junction temperature Storage temperature I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) MA2C700 MA2C700A Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η Symbol IR VR = 15 V VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.3 1 Conditions Min Typ Max 100 150 0.4 1 V V pF ns Unit nA Detection efficiency 60 13 min. 2.2 ± 0.3 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input...