MA2C723

Schottky Barrier Diodes (SBD) MA2C723 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features Allowing to rectify under (IF(AV) = 200 mA) condition Sealed in DO-34 (DHD) package Allowing high-density mounting (5 mm pitch insertion) High reliability φ 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Non-repetitive peak forward surge current* Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR IFSM IFM IF(AV) Tj Tstg Rating 30 1.5 300 200 150 −55 to +150 Unit V A mA mA °C °C 2 φ 1.75 max. 1 : Casthode 2 : Anode JEDEC : DO-34 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3.0 Conditions Min Typ Max 50 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz I Cathode Indication 3. * : trr measuring instrument Color band in pink Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 m...