MA2C774

Schottky Barrier Diodes (SBD) MA2C774 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features Sealed in small glass package (DO-34) Allowing to insert to a 5 mm pitch hole Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 100 2 150 −55 to +150 Unit V V mA mA A °C °C 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 1.5 Conditions Min Typ Max 15 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated ...