MA2C859

Band Switching Diodes MA2C859 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole Less voltage dependence of the terminal capacitance Ct Low forward dynamic resistance rf Optimum for a band switching of a tuner 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +100 Unit V mA °C °C 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC)*1 Symbol IR VF Ct r f* 2 rf *3 Conditions VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Min Typ Max 100 1.0 13 min. 2.2 ± 0.3 1st Band 2nd Band 0.2 max. 13 min. I Features COLORED BAND INDICATES CATHODE 1 Unit nA V pF Ω Ω Forward voltage (DC) Terminal capacitance Forward dynamic resistance 0.8 0.5 0.77 1.2 0.65 0.98 Note) 1 Rated input/output frequency: 100 MHz 2 *1 : Measurement in light shielded condition *2 : rf measuring instrument: Nihon Koshuha MODEL TDC-121A Lead length 5mm *3 : rf measuring instrument: YHP 4191A Lead length 5mm I Cathode Indication Type No. Color 1st Band 2nd Band MA2C859 Black Blue 1 MA2C859 IF  V F 102 103 Ta = 85°C 10 Band Switching Diodes IR  V R 103 IR  T a Forward current IF (mA) Reverse current IR (pA) 50°C 1 Reverse current IR (pA) 102 102 VR = 33...