Schottky Barrier Diodes (SBD)
MA2D755
Silicon epitaxial planar type
Unit : mm
For switching power supply
9.9 ± 0.3 4.6...
Schottky Barrier Diodes (SBD)
MA2D755
Silicon epitaxial planar type
Unit : mm
For switching power supply
9.9 ± 0.3 4.6 ± 0.2
13.7 ± 0.2 4.2 ± 0.2
TO-220D Package Allowing to rectify under (IF(AV) = 5 A) condition VR = 60 V guaranteed Single type
15.0 ± 0.5
I Features
φ 3.2 ± 0.1
1.5 − 0.4
+0
3.0 ± 0.5
2.9 ± 0.2
2.6 ± 0.1 1.4 ± 0.2 0.8 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 60 5 90 −40 to +125 −40 to +125 Unit V A A °C °C
0.55 ± 0.15
5.08 ± 0.5 2.54 ± 0.3 1 2
1 : Cathode 2 : Anode TO-220D Package (2-pin)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance Symbol IR VF Rth(j-c) VR = 60 V IF = 5 A Direct current (between junction and case) Conditions Min Typ Max 3 0.58 3 Unit mA V °C/W
Note) Rated input/output frequency: 150 kHz
1
MA2D755
IF V F
102 102
Schottky Barrier Diodes (SBD)
IR V R
600
Ct VR
Ta = 125°C
10
Reverse current IR (mA)
Forward current IF (A)
25°C
10 75°C 1
Terminal capacitance Ct (pF)
Ta = 125°C
500
400
1
300
10−1
10−1
25°C
200
10−2
10−2
100
10−3
0
0.2
0.4
0.6
0.8
1.0
1.2
10−3
0
10
20
30
40
50
60
0
0
10
20
30
40
50
60
Forward voltage VF (V)
Reverse voltag...
