MA2J116

Switching Diodes MA2J116 Silicon epitaxial planar type Unit : mm For general purpose I Features Small S-mini type package, allowing high-density mounting Soft recovery characteristic (trr = 100 ns) K A 0.625 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Noe) * : t=1s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 1H I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Forward dynamic resistance*1 Reverse recovery time*2 VF VR Ct rf trr VR = 15 V VR = 40 V VR = 35 V, Ta = 100°C IF = 100 mA IR = 100 µA VR = 6 V, f = 1 MHz IF = 3 mA, f = 30 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 35 1.0 2.0 3.6 100 Conditions Min Typ Max 5 10 100 1.2 Unit nA nA µA V V pF Ω ns Note) 1. Rated input/output frequency: 100 MHz 2. *1 : YHP 4191A PF IMPEDANCE ANALYZER *2 : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°C 0.16 − ...