MA2J704

Schottky Barrier Diodes (SBD) MA2J704 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit K A 0.625 0.16 − 0.06 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 20 20 300 200 1 125 −55 to +125 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2S Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr VR = 10 V VR = 20 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 30 3.0 Conditions Min Typ Max 2 5 0.55 Unit µA µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs...