Document
Schottky Barrier Diodes (SBD)
MA2J728
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For wave detection circuit
K A
0.625
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125 −55 to +125 Unit V V mA mA °C °C
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 2A
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 300 0.4 1.0 Unit nA V V pF ns
Detection efficiency
65
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument
Bias Applicaiton Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0.7 ± 0.1
• Sealed in the S-mini (2-pin) mold and super small type • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Extremely low reverse current IR • Small temperature coefficient of forward characteristic
2
0.16 − 0.06
+ 0.1
1
1.25 ± 0.1
0.5 ± 0.1
I Features
0.3
%
1
MA2J728
IF V F
103
Schottky Barrier Diodes (SBD)
VF Ta
1.0
103
IR VR
102
75°C 25°C Ta = 125°C − 20°C
Forward current IF (mA)
0.8
102
Forward voltage VF (V)
IF = 30 mA 0.6 10 mA 0.4
10
Reverse current IR (µA)
Ta = 125°C
10
75°C
1
1 25°C 10−1
10−1
0.2
1 mA
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
0 −40
10−2
0
40
80
120
160
200
0
5
10
15
20
25
30
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Ct VR
3.0 f = 1 MHz Ta = 25°C
IR T a
103
Terminal capacitance Ct (pF)
2.5
102
2.0
Reverse current IR (µA)
VR = 30 V 10 V 1V
10
1.5
1
1.0
0.5
10−1
0
0
5
10
15
20
25
30
10−2 −40
0
40
80
120
160
200
Reverse voltage VR (V)
Ambient temperature Ta (°C)
2
.