Schottky Barrier Diodes (SBD)
MA2J732 (MA732)
Silicon epitaxial planar type
Unit: mm
For switching For wave detection ...
Schottky Barrier Diodes (SBD)
MA2J732 (MA732)
Silicon epitaxial planar type
Unit: mm
For switching For wave detection I Features
Low forward voltage VF, optimum for low voltage rectification Low VF type of MA3X704A (MA704A) Optimum for high frequency rectification because of its short reverse recovery time (trr) S-Mini type 2-pin package
1.25±0.1 0.35±0.1
0.7±0.1
1 0 to 0.1
1.7±0.1
0.16+0.1 –0.06 5°
0 to 0.1
Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage temperature
Symbol VR VRM IFM IF Tj Tstg
Rating 30 30 150 30 125 −55 to +125
Unit V V mA mA °C °C
1 : Anode 2 : Cathode EIAJ : SC-90A
SMini2-F1 Package
Marking Symbol: 2C
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time * Detection efficiency Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 65 Conditions Min Typ Max 30 0.3 1.0 pF ns % Unit µA V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pul...