PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004 Product data sheet
1. Product profile
1...
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect
transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance s Low thermal resistance s Fast switching s Low gate charge.
1.3 Applications
s DC-to-DC primary side switching.
1.4 Quick reference data
s VDS ≤ 200 V s RDSon ≤ 77 mΩ s ID ≤ 32.7 A s Qgd = 9.6 nC (typ).
2. Pinning information
Table 1: 1 2 3 mb gate drain source mounting base; connected to drain
[1]
Discrete pinning Simplified outline
mb mb
Pin Description
Symbol
D
G
mbb076
S
2 1 1 2 3 3
SOT78 (TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK)
Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information Package Name PHP33NQ20T PHB33NQ20T TO-220AB D2-PAK Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB Version SOT78 Type number
Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404 cropped)
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dis...