MA2S077

Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. 0.15 min. I Features Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 1.7 ± 0.1 Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.7 ± 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Note) * : Maximum ambient temperature during operation Marking Symbol: S I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 − 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25°C 0.27 − 0.02 + 0.05 1 MA2S077 IF  V F 120 Ta = 25°C 100 50 100 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C 1 000 IR  T a VR = 33 V Diode capacitance CD (pF) Forward current IF (mA) 80 10 5 3 2 1 0.5 0.3 0.2 0.1 60 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 30 20 100 10 40 1 20 0 0 0.2 0.4 ...