Document
Variable Capacitance Diodes
MA2S374
Silicon epitaxial planar type
Unit : mm
For CATV tuner I Features
• Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.15 min.
0.15 min.
0.27 − 0.02
0.8 ± 0.1
+ 0.05
1.3 ± 0.1 1.7 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) Peak reverse voltage* Junction temperature Storage temperature Note) * : RL = 10 kΩ VR VRM Tj Tstg 34 35 150 −55 to +150 V V °C °C
0.7 ± 0.1 0.13 − 0.02
+ 0.05
Parameter
Symbol
Rating
Unit
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: T
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(0V)*1 CD(2V) CD(25V) CD(10V) CD(17V) Capacitance ratio Diode capacitance deviation Series resistance*2 CD(2V)/CD(25V) ∆C rD CD(2V)(10V)(17V)(25V) CD = 9 pF, f = 470 MHz VR = 30 V VR = 0 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 10 V, f = 1 MHz VR = 17 V, f = 1 MHz 87 44.00 2.60 8.80 3.70 15.0 2.0 0.9 50.79 3.03 13.08 5.04 Conditions Min Typ Max 10 Unit nA pF pF pF pF pF % Ω
Note) 1 Rated input/output frequency: 470 MHz 2 *1 : Measurement at Low Signal Level *2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.27 − 0.02
+ 0.05
1
MA2S374
CD VR
100 f = 1 MHz Ta = 25°C 120 25°C Ta = 60°C − 40°C
Variable Capacitance Diodes
IF V F
1.04
CD Ta
f = 1 MHz
50
100
1.03 VR = 2 V
Diode capacitance CD (pF)
30 20
Forward currentn IF (mA)
CD(Ta) CD(Ta = 25°C)
80
1.02
10
60
1.01
17 V 10 V 25 V
5 3 2
40
1.00
20
0.99
1
0
4
8 12 16 20 24 28 32 36 40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.98
0
20
40
60
80
100
Reverse voltage VR (V)
Forward voltage VF (V)
Ambient temperature Ta (°C)
IR Ta
1 000 VR = 32 V
Reverse current IR (nA)
100
10
1
0.1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
2
.