MA2YD17

Schottky Barrier Diodes (SBD) MA2YD17 Silicon epitaxial planar type Unit: mm For high frequency rectification ■ Features 1.6±0.1 1 0.80±0.05 0 to 0.1 2.6±0.1 3.5±0.1 Reverse voltage VR = 100 V is guaranteed 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 100 100 300 1.5 125 −55 to +125 Unit V 5˚ 2 0.55±0.1 0.45±0.1 0.16+0.1 –0.06 mA A °C °C 1: Anode 2: Cathode Mini2-F1 Package Marking Symbol: 2T Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF IR Ct trr VR = 100 V Conditions IF = 300 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 IR , RL = 100 Ω Min Typ 0.50 Max 0.58 200 0 to 0.3 V 0 to 0.1 Unit V µA pF ns 100 7 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measurement circuit Bias Application Unit (N-50BU) tr 10% Input Pulse tp t IF trr t Irr = 0.1 IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (...