MA2YD23

Schottky Barrier Diodes (SBD) MA2YD23 Silicon epitaxial planar type Unit: mm For high frequency rectification ■ Features Forward current (Average) IF(AV) = 1 A rectification is possible Low forward voltage VF Small reverse current IR 1.6±0.1 1 0.80±0.05 0 to 0.1 2.6±0.1 3.5±0.1 2 0.55±0.1 5˚ 5˚ 0.45±0.1 0.16+0.1 –0.06 ■ Absolute Maximum Ratings Ta = 25°C 0 to 0.1 Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) *1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 25 25 1.0 3 125 −55 to +125 Unit V V A A °C °C 1 : Anode 2 : Cathode Non-repetitive peak forward surge current *2 Junction temperature Storage temperature Mini2-F1 Package Marking Symbol: 2W Note) *1: Mounted on an alumina PC board *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Symbol VF1 VF2 Reverse current IR1 IR2 IF = 0.5 A IF = 1.0 A VR = 15 V VR = 20 V Conditions Min Typ 0.42 0.46 1.5 2.5 Max 0.47 0.55 20.0 40.0 µA Unit V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 0 to 0.3 Publication date: April 2004 SKH00034BED 1 MA2YD23 IF  V F Ta = 125°C 104 103 104 103 IR  V R Ct  VR Ta = 25°C 102 10 1 10−1 10−...