Silicon epitaxial planar type
Variable Capacitance Diodes
MA2Z304 (MA304)
Silicon epitaxial planar type
Unit: mm
For VCO s Features
0.30+0.10 –0.05...
Description
Variable Capacitance Diodes
MA2Z304 (MA304)
Silicon epitaxial planar type
Unit: mm
For VCO s Features
0.30+0.10 –0.05 2
1.7±0.10
1.25±0.10
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 30 150 −55 to +150 Unit V °C °C
7˚
(0.4)
Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD S-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
2.5±0.2
1 0.16 +0.10 –0.06
0.00±0.05
0.90±0.15
0.9±0.1
5˚
1: Anode 2: Cathode SMini2-G1 Package
Marking Symbol: 8R
s Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance * CD(1V)/CD(4V) rD VR = 4 V, f = 100 MHz VR = 28 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 24.8 6.0 3.0 1.0 Conditions Min Typ Max 10 29.8 8.3 Ω Unit nA pF
Note) 1. Rated input/output frequency: 100 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002 SKD00027BED
(0.4)
1
MA2Z304
I F VF
120 25°C 100
CD VR
f = 1 MHz Ta = 25°C
CD Ta
1.04 f = 1 MHz VR = 1 V
100
50
1.03 4V
Diode capacitance CD (pF)
Forward current IF (mA)
60
10
CD (Ta) CD (Ta = 25°C)
0 4 8 12 16 20 24 28 32 36 40
80
Ta = 60°C
−40°C
30 20
1.02
1.01
40
5 3 2
1.00
20
0.99
0 0 0.2 0.4 ...
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