Silicon epitaxial planar type
Variable Capacitance Diodes
MA2Z366
Silicon epitaxial planar type
Unit : mm
For CATV tuner
INDICATES CATHODE 0.4 ± 0.1...
Description
Variable Capacitance Diodes
MA2Z366
Silicon epitaxial planar type
Unit : mm
For CATV tuner
INDICATES CATHODE 0.4 ± 0.15
I Features
Large capacitance ratio Small series resistance rD, resulting in obtaining high performance index, Q of a circuit S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
1 2
0.4 ± 0.15
1.7 ± 0.1 2.5 ± 0.2
Parameter Reverse voltage (DC) Peak reverse voltage* Forward current (DC) Junction temperature Storage temperature Note) * : RL = 10 kΩ
Symbol VR VRM IF Tj Tstg
Rating 34 35 20 150 −55 to +150
Unit V V mA °C °C
0.9 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 6H
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(25V) CD(10V) CD(17V) Capacitance ratio Diode capacitance deviation Series resistance* CD(2V)/CD(25V) ∆C rD CD(2V)(10V)(17V)(25V) CD = 9 pF, f = 470 MHz VR = 30 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 10 V, f = 1 MHz VR = 17 V, f = 1 MHz 27.13 2.60 7.05 3.48 10 2.5 0.63 Conditions Min Typ Max 10 32.15 3.15 9.97 4.74 Unit nA pF pF pF pF % Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.06
+ 0.1
0.3 − 0.05
+ 0.1
1.25 ± 0.1
1
MA2Z366
CD VR
100 f = 1 MHz Ta = 25°C 120
Variable Capacitance Diodes
IF V F
1.03
CD Ta
f = 1 MHz
50
100
1.02 VR = 2...
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