Silicon epitaxial planar type
Variable Capacitance Diodes
MA2Z367
Silicon epitaxial planar type
Unit : mm
For AFC of UHF and VHF electronic tuner I ...
Description
Variable Capacitance Diodes
MA2Z367
Silicon epitaxial planar type
Unit : mm
For AFC of UHF and VHF electronic tuner I Features
Large capacitance ratio Small series resistance rD S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
INDICATES CATHODE
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1 2.5 ± 0.2
Parameter Reverse voltage (DC) Peak reverse voltage Junction temperature Storage temperature
Symbol VR VRM Tj Tstg
Rating 30 34 150 −55 to +150
Unit V V °C °C
0.9 ± 0.1
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 6K
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(10V) Capacitance ratio Series resistance* CD(2V)/CD(10V) rD VR = 9 pF, f = 470 MHz VR = 30 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz 10.5 3.3 2.8 Conditions Min Typ Max 10 16.0 5.7 3.4 1.6 Unit nA pF pF Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.06
+ 0.1
I Absolute Maximum Ratings Ta = 25°C
0.3 − 0.05
+ 0.1
1.25 ± 0.1
1
MA2Z367
CD VR
100 f = 1 MHz Ta = 25°C 120
Variable Capacitance Diodes
IF V F
1.03
CD Ta
f = 1 MHz VR = 2 V
50
100
1.02
Diode capacitance CD (pF)
30 20
Forward current IF (mA)
10
60
25°C
− 40°C
CD(Ta) CD(Ta = 25°C)
80
Ta = 60°C
1.01
10 V
1.00
5 3 2
40
0.99
20
0.98
1
0
4
8 12 16 20 24 28 32 36 40
0
0
0.2
0.4
0.6
0.8
1...
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