MA2Z376

Variable Capacitance Diodes MA2Z376 (MA376) Silicon epitaxial planar type Unit: mm For VCO of UHF band radio s Features Small series resistance rD S-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.30+0.10 –0.05 2 1.7±0.10 2.5±0.2 1 1.25±0.10 5˚ s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 7˚ (0.4) 0.16 +0.10 –0.06 0.00±0.05 0.90±0.15 0.9±0.1 1: Anode 2: Cathode SMini2-G1 Package Marking Symbol: 7C s Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Series resistance * Symbol IR CD(1V) CD(3V) rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.00 6.80 Conditions Min Typ Max 10 16.00 8.90 0.3 Ω Unit nA pF Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. Publication date: April 2002 SKD00041BED (0.4) 1 MA2Z376 I F  VF 120 100 CD  VR f = 1 MHz Ta = 25°C 1.04 CD  Ta f = 1 MHz VR = 1 V 3V 100 50 1.03 Diode capacitance CD (pF) Forward current IF (mA) 30 60 25°C −40°C 10 CD (Ta) CD (Ta = 25°C) 0 4 8 12 16 20 24 28 32 36 40 80 Ta = 60°C 20 1.02 1.01 40 5 3 2 1.00 20 0.99 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.98 0 20 40 60 80 100 Forward voltage VF (V) Reverse volta...