MA2Z785

Schottky Barrier Diodes (SBD) MA2Z785 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 0.5 ± 0.1 K A 0.625 S-mini type 2-pin package, allowing high-density mounting Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency Reverse voltage VR (DC value) = 50 V guaranteed 2 0.16 − 0.06 + 0.1 1 1.25 ± 0.1 I Features 0.3 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 50 50 300 100 1 125 −55 to +125 Unit V V mA mA A °C °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2E Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3 Conditions Min Typ Max 30 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charg...