MA2ZD02

Schottky Barrier Diodes (SBD) MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification K A 0.625 I Features 0.5 ± 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 −55 to +125 Unit V V mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (nonrepetitive) Marking Symbol: 2H Internal Connection 2 1 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 5 V VR = 10 V IF = 10 mA IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 0.3 0.5 60 5 Conditions Min Typ Max 1 10 0.4 0.55 Unit µA µA V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0...