Document
Schottky Barrier Diodes (SBD)
MA2ZD14
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
K A
0.625
I Features
0.5 ± 0.1
2
0.16 − 0.06
1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg
Rating 20 20 100 300 1 125 −55 to +125
Unit V V mA mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 2N Internal Connection
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
2
1
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3.0 Conditions Min Typ Max 20 0.27 0.40 Unit µA V V pF ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0.7 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
+ 0.1
1.25 ± 0.1
• S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V)
0.3
1
MA2ZD14
IF V F
1 10−1 Ta = 125°C
Schottky Barrier Diodes (SBD)
IR V R
10−1
10−2
Forward current IF (A)
10−2 75°C 25°C 10−4 − 20°C
Reverse current IR (A)
Ta = 125°C 10−3 75°C
10−3
10−4
10−5
10−5
25°C
10−6
0
0.1
0.2
0.3
0.4
0.5
0.6
10−6
0
5
10
15
20
25
30
Forward voltage VF (V)
Reverse voltage VR (V)
2
.