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MA2ZD14 Dataheets PDF



Part Number MA2ZD14
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA2ZD14 DatasheetMA2ZD14 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits K A 0.625 I Features 0.5 ± 0.1 2 0.16 − 0.06 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 20 20 100 300 1 125 −55 to +125 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± .

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Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits K A 0.625 I Features 0.5 ± 0.1 2 0.16 − 0.06 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 20 20 100 300 1 125 −55 to +125 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2N Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3.0 Conditions Min Typ Max 20 0.27 0.40 Unit µA V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°C + 0.1 1.25 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 0.3 1 MA2ZD14 IF  V F 1 10−1 Ta = 125°C Schottky Barrier Diodes (SBD) IR  V R 10−1 10−2 Forward current IF (A) 10−2 75°C 25°C 10−4 − 20°C Reverse current IR (A) Ta = 125°C 10−3 75°C 10−3 10−4 10−5 10−5 25°C 10−6 0 0.1 0.2 0.3 0.4 0.5 0.6 10−6 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) 2 .


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