Silicon epitaxial planar type
Variable Capacitance Diodes
MA2ZV06
Silicon epitaxial planar type
Unit : mm
For VCO I Features
• Good linearity and la...
Description
Variable Capacitance Diodes
MA2ZV06
Silicon epitaxial planar type
Unit : mm
For VCO I Features
Good linearity and large capacitance-ratio in CD VR relation Small series resistance rD S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
INDICATES CATHODE
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1 2.5 ± 0.2
Parameter Reverse voltage (DC) Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 6 150 −55 to +150
Unit V °C °C
0.9 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 8C
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 37.0 14.6 2.40 Conditions Min Typ Max 10 41.0 16.2 2.70 0.3 Unit nA pF pF Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.06
+ 0.1
0.3 − 0.05
+ 0.1
1.25 ± 0.1
1
MA2ZV06
CD VR
100 50 f = 1 MHz Ta = 25°C
120
Variable Capacitance Diodes
IF V F
1.04 f = 1 MHz
25°C Ta = 60°C
80
CD Ta
VR = 1 V
100
1.03
− 40°C
Diode capacitance CD (pF)
Forward current IF (mA)
30 20
4V 1.02
10
60
5 3 2
40
20
1
0
4
8 12 16 20 24 28 32 36 40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
CD(Ta) CD(Ta = 25°C)
1.01
1.00
0.99
0.98
0
20
40
6...
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