Fast Recovery Diode
Fast Recovery Diodes (FRD)
MA3D652 (MA6D52)
Silicon planar type (cathode common)
For high-frequency rectification
9.9...
Description
Fast Recovery Diodes (FRD)
MA3D652 (MA6D52)
Silicon planar type (cathode common)
For high-frequency rectification
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
■ Features
φ 3.2±0.1
15.0±0.5
Low forward voltage VF
Fast reverse recovery time trr
TO-220D (Full-pack package) with high dielectric breakdown voltage
Easy-to-mount, caused by its V cut lead end
1.4±0.2 1.6±0.2
2.6±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
13.7±0.2 4.2±0.2
Solder Dip
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
c type) Repetitive peak reverse voltage VRRM
200
V
n d ge. ed Non-repetitive peak reverse
VRSM
200
V
sta tinu surge voltage
a e cycle iscon Forward current (Average)
IF(AV)
20
A
life d, d Non-repetitive peak forward
IFSM
100
A
n u duct type surge current *
te tin Pro ued Junction temperature
four ntin Storage temperature
Tj
−40 to +150
°C
Tstg
−40 to +150
°C
wing disco Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
2.54±0.30 5.08±0.50
123
1: Anode 2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
Internal Connection
123
ain oncludes fpoell,oplaned ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed in ce ty Parameter
Symbol
Conditions
Min Typ Max Unit
tinu nan Forward voltage
M is con inte Repetitive peak reverse current D ance/Ditsype, ma Reverse recovery time *
inten nce Thermal resistance (j-c) Ma tena Thermal resistance (j-a)
VF IRRM1 IRRM2
trr Rth(j-c) Rth(j-a)
IF = 10 A, TC = 25°C VRRM = 200 V, TC = 25°C VRRM =...
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