MA3D756

Schottky Barrier Diodes (SBD) MA3D756 (MA7D56) Silicon epitaxial planar type (cathode common) For switching mode power supply 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 Low forward voltage VF High dielectric breakdown voltage: > 5 kV Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 MaDinistecnoanntincueed ■NNRFsJSFRTNoouuttootheeEoeeornprrvegn))rwwcelreae-etm1t*2rraagiiseotc..:crreaiepdudnvMHAlttererccevrtrabteiueepeumioclsatrmsfneroliPrsaiprtavtsesluapekeauieltn*gnrneartritrCaeptreennaeate(cvgmufwthAaeeurrmkeareaevr(sqvetejefere-ueortacva;rehr)ogcnwo1lecd0tta)ayesrgmdroaeisrfs/ecitnbyicp(acpuslseletaVIdaInFTTFnRT(eoSAsRMdCdtjnMVgSMao)RmJ=yuiAVntmIaht2RtP(piFejbn-u5Acnto)t−−e°aNli44nCnsE00ac5Sn1e±tt610Ecoo2/D00e30MIV++IiFN°ts11RyH=cC22Dp=oz55e5Un.6,tAS0imnTuVaReinId°°tAVAACeCCinLnocanSlnudTcdiAeteiosNtynfDposelAl,oRpwDlianngJeIfSdouCdris7Pc0ro3on1d1tiuMnmcu2teinealidsfe3u5tc.ry0iyp8nc±Teg0l.yed5m0p,sdTetaitOshgc-oe2oM0d2.3n.s03.a5tD0if8xno-uA123re:::1dCAdAiPoan°nattUodycmChodpekVodn/eAsaedeWig.et)e Publication date: January 2004 Note) The part number in the parenthesis shows conventional part number. SKH00046BED 1 MA3D756 Forward current IF (A) Reverse current IR (mA) IF  VF 10 75°C 25°C Ta = 125°C −20°C 1 IR  VR 102 VF  Ta 0.8 Ta = 125°C 10 0.6 Forward voltage V...