This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3D799 (MA10799)
Silicon...
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3D799 (MA10799)
Silicon epitaxial planar type (cathode common)
3.0±0.5
For switching mode power supply ■ Features
/ Forward current (Average) IF(AV) = 10 A rectification is possible
. Cathode-common dual type
e ge Low forward voltage: VF < 0.47 V
15.0±0.5
13.7±0.2 4.2±0.2
Solder Dip
nc d ycle sta ■ Absolute Maximum Ratings TC = 25°C
lifec Parameter
Symbol Rating
Unit
a e t Repetitive peak reverse voltage
VRRM
30
V
uc Forward current (Average)
IF(AV)
10
A
n u rod Non-repetitive peak forward
IFSM
120
A
P surge current *
te tin ur . Junctiontemperature
Tj
−40 to +125
°C
g fo pe tion Storage temperature
Tstg
−40 to +125
°C
in ty a Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
φ 3.2±0.1
1.4±0.2 1.6±0.2
0.8±0.1
2.6±0.1 0.55±0.15
2.54±0.30 5.08±0.50
123
1: Anode 2: Cathode
(common) 3: Anode TO-220D-A1 Package
ain cod innclueddems afioninltleotenwnacanoncnceteitnyuupeeeddttyypopeuetdlatt/essct/einnform ■ Electrical Characteristics TC = 25°C ± 3°C
M is tinue lan ma dis tin ab .ne Parameter
Symbol
Conditions
Min Typ Max Unit
p d on RL ic Forward voltage on ne isc U on Reverse current isc pla d ing nas Thermal resistance (j-c)
VF IR Rth(j-c)
IF = 5 A, TC = 25°C VR = 30 V, TC = 25°C
0.47
V
3
mA
3.0 °C/W
D /D w a Note) 1. Measuring methods are based on JAPANESE INDUSTRI...
