MA3G751

Schottky Barrier Diodes (SBD) MA3G751, MA3G751A Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply I Features Forward current (average) IF(AV): 20 A type High reliability caused by sealed in the TOP-3F (Full-pack package) Cathode common dual type Low forward rise voltage VF 0.7 15.0 ± 0.3 11.0 ± 0.2 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 16.2 ± 0.5 12.5 3.5 Solder Dip 2.0 ± 0.2 2.0 ± 0.1 0.6 ± 0.2 1.1 ± 0.1 5.45 ± 0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage MA3G751 MA3G751A IF(AV) IFSM Tj Tstg Symbol VRRM Rating 40 45 20 150 −40 to +125 −40 to +125 A A °C °C Unit V 10.9 ± 0.5 1 2 3 Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature 1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F (TOP-3 Full-Pack Package ) Marking Symbol MA3G751 : MA3G751 MA3G751A : MA3G751A Internal Connection Note) * : Half sine-wave: 10 ms/cycle 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) MA3G751 MA3G751A Forward voltage (DC) Thermal resistance VF Rth(j-c) Symbol IR VR = 40 V VR = 45 V IF = 10 A Direct current (between junction and case) Conditions Min Typ Max 5 5 0.55 1.5 V °C/W Unit mA Note) Rated input/output frequency: 100 MHz 1 MA3G751, MA3G751A IF  V F 100 Schottky Barrier Diodes (SBD) IR  V R 106 30 PD(AV)  IF(AV) Average forward power PD(AV) (W) 105 Forward current IF (A) 10 Reverse curren...