MA3J741D

Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.1 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) MA3J741D MA3J741E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode 1,2 Cathode 1,2 Junction temperature Storage temperature Note) * : Value per hcip Marking Symbol MA3J741D : M2P MA3J741E : M2R Internal Connection 1 3 2 2 1 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Conditions D Min Typ Max 1 0.4 1 0.15 − 0.05 Two MA3J741s are contained in one package (S-mini type 3-pin) Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) Small temperature coefficient of forward characteristic Extremely low reverse current IR 1 3 2 + 0.1 0.3 − 0 I Features E Unit µA V V pF ns 1.5 1 Detection efficiency 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc...