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MA3J742 Dataheets PDF



Part Number MA3J742
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA3J742 DatasheetMA3J742 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3X716 (MA716) is contained in one package (series connection) • Low forward voltage VF , optimum for low voltage rectification • Optimum for high frequency rectification because of its short reverse recovery time (trr) • S-Mini type 3-pin package 1.25±0.1 2.1±0.1 I Features 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 5° 0.9±0.1 0 to 0.1 I Absolute Maximum Ratings.

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Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3X716 (MA716) is contained in one package (series connection) • Low forward voltage VF , optimum for low voltage rectification • Optimum for high frequency rectification because of its short reverse recovery time (trr) • S-Mini type 3-pin package 1.25±0.1 2.1±0.1 I Features 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 5° 0.9±0.1 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Single Series * Peak forward current Single Series * Junction temperature Storage temperature Note) *: Value per chip Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 SMini3-F1 Package Marking Symbol: M1U Internal Connection 3 1 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Min Typ Max 1 0.4 1 (0.15) Unit µA V Ct trr h 1.5 1 65 Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Note) The part number in the parenthesis shows conventional part number. SKH00056AED (0.425) 5° pF ns % Publication date: August 2001 1 MA3J742 IF  V F 103 103 IR  V R 1.0 VF  Ta 102 75°C 25°C Ta = 125°C −20°C 102 Forward current IF (mA) Reverse current IR (µA) Forward voltage VF (V) Ta = 125°C 0.8 IF = 30 mA 0.6 10 10 75°C 1 1 25°C 10−1 0.4 3 mA 0.2 1 mA 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 10−2 0 5 10 15 20 25 30 0 −40 0 40 80 120 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  T a 103 2.4 Ct  VR f = 1 MHz Ta = 25°C VR = 30 V 15 V Terminal capacitance Ct (pF) 102 2.0 Reverse current IR (µA) 1.6 10 1.2 1 0.8 10−1 0.4 10−2 −40 0 0 40 80 120 160 200 0 5 10 15 20 25 30 Ambient temperature Ta (°C) Reverse voltage VR (V) 2 SKH00056AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchan.


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