MA3J742

Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 Two MA3X716 (MA716) is contained in one package (series connection) Low forward voltage VF , optimum for low voltage rectification Optimum for high frequency rectification because of its short reverse recovery time (trr) S-Mini type 3-pin package 1.25±0.1 2.1±0.1 I Features 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 5° 0.9±0.1 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Single Series * Peak forward current Single Series * Junction temperature Storage temperature Note) *: Value per chip Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 SMini3-F1 Package Marking Symbol: M1U Internal Connection 3 1 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Min Typ Max 1 0.4 1 (0.15) Unit µA V Ct trr h 1.5 1 65 Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. ...