Schottky Barrier Diodes (SBD)
MA3J745D
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Opt...
Schottky Barrier Diodes (SBD)
MA3J745D
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
Optimum for low-voltage rectification because of its low forward rise voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA
0.9 ± 0.1
1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin)
Marking Symbol: M3E Internal Connection
1 3 2
Junction temperature Storage temperature Note) * : Value per chip
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 30 0.3 1.0 Unit µA V V pF ns
Detection efficiency
65
0.15 − 0.05
+ 0.1
0.3 − 0
%
Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency...