MA3S133

Switching Diodes MA3S133 Silicon epitaxial planar type Unit : mm For switching circuits I Features Super-small SS-mini type package contained two elements, allowing high-density mounting Two diodes are connected in series in the package 1.60 − 0.03 0.80 0.80 0.51 0.51 0.28 ± 0.05 0.80 1.60 ± 0.1 0.80 ± 0.05 1 + 0.05 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Single Series Single Series Tj Tstg IFM Symbol VR VRM IF Rating 80 80 100 65 200 130 150 −55 to +150 °C °C mA Unit V V mA 0.60 − 0.03 + 0.05 0.44 0.44 + 0.05 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 SS-Mini Type Package (3-pin) 0.88 − 0.03 Marking Symbol: MP Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance time*3 Symbol IR VF VR C t* 1 C t* 2 Reverse recovery trr *1 Conditions VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω Min Typ Max 100 1.2 0.12 − 0.02 + 0.05 0.28 ± 0.05 Unit nA V V 80 5.5 3.0 150 9 pF pF ns ns trr*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 2 and 3 *2 : Between pins 1 and 3 Bias Application Unit N-50BU tr 10% tp *3 : trr measuring circuit Input Pulse t IF trr t Irr = ...