MA3S781

Schottky Barrier Diodes (SBD) MA3S781 Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For the switching circuit I Features 1608 type diode contained in the (SS-mini) package Surface mounting, allowing high-density mounting Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency 0.80 1.60 ± 0.1 0.80 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 1 + 0.05 3 2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.60 − 0.03 0.44 0.44 + 0.05 1 : Cathode 2 : NC 3 : Anode SS-Mini Type Package (3-pin) 0.88 − 0.03 Marking Symbol: M1L Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Detection efficiency Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 65 Conditions Min Typ Max 300 0.4 1 Unit nA V V pF ns % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr m...