Silicon planar type (cathode common)
Fast Recovery Diodes (FRD)
MA3U649
Silicon planar type (cathode common)
Unit : mm
For high-frequency rectification I F...
Description
Fast Recovery Diodes (FRD)
MA3U649
Silicon planar type (cathode common)
Unit : mm
For high-frequency rectification I Features
Small U-type package for surface mounting Low-loss type with fast reverse recovery time trr Cathode common dual type
6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1
2.3 ± 0.1 0.5 ± 0.1
7.3 ± 0.1
1.8 ± 0.1
2.5 ± 0.1
0.8 max.
0.93 ± 0.1
1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 200 200 5 40 −40 to +150 −40 to +150 Unit V V A A °C °C
1
0.75 ± 0.1 2.3 ± 0.1 4.6 ± 0.1
2
3
1 : Anode 2 : Cathode (Common) 3 : Anode U-Type Package
Note) 1. *1 : TC = 25°C *2 : Half sine-wave; 10 ms/cycle
I Electrical Characteristics Ta = 25°C
Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time*2 Thermal resistance*1 VF trr Rth(j-c) Conditions VRRM = 200 V, TC = 25°C VRRM = 200 V, Tj = 150°C IF = 2.5 A, TC = 25°C IF = 1 A, IR = 1 A Direct current (between junction and case) Min Typ Max 20 2 0.98 30 12.5 Unit µA mA V ns °C/W
Note) 1. Rated input/output frequency: 200 MHz 2. *1 : TC = 25°C *2 : trr measuring circuit
50 Ω
50 Ω
trr IF
D.U.T
5.5 Ω
IR
0.1 × IR
1.0 ± 0.2
1
MA3U649
IF V F
10
1.6 1.4
Fast Recovery Diodes (FRD)
VF Ta IR VR
104 Ta = 150°C
...
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