MA3U760

Schottky Barrier Diodes (SBD) MA3U760 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 1.8 ± 0.1 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 2.3 ± 0.1 0.5 ± 0.1 0.8 max. Small U-type package and surface mounting High breakdown voltage VR Low forward rise voltage VF Cathode common dual type 7.3 ± 0.1 I Features 2.5 ± 0.1 0.93 ± 0.1 1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1 0.75 ± 0.1 2.3 ± 0.1 4.6 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 90 5 40 −40 to +125 −40 to +125 Unit V 1 2 3 A A °C °C 1 : Anode 2 : Cathode (Common) 3 : Anode U-Type Package Note) * : Half sine-wave: 10 ms/cycle I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance* Symbol IR VF Rth(j-c) Conditions VR = 90 V, TC = 25°C IF = 2.5 A, TC = 25°C Between junction and case Min Typ Max 1.0 0.85 12.5 Unit mA V °C/W Note) 1. Rated input/output frequency: 1 000 MHz 2. * : TC = 25°C 1.0 ± 0.2 1 MA3U760 IF  V F 104 75°C 25°C Ta = 125°C − 20°C 1.6 1.4 Schottky Barrier Diodes (SBD) VF  Ta 104 IR  VR Ta = 125°C 103 103 Forward current IF (mA) Forward voltage VF (V) 1.2 1.0 0.8 0.6 0.4 0.2 IF = 5 A 2.5 A 1A Reverse current IR (µA) 75°C 102 25°C 10 102 10 1 1 10−1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 −40 10−1 0 40 80 120 1...