Silicon epitaxial planar type Switching Diodes
Switching Diodes
MA3V177
Silicon epitaxial planar type
For switching circuits I Features
• Small terminal capacitance, ...
Description
Switching Diodes
MA3V177
Silicon epitaxial planar type
For switching circuits I Features
Small terminal capacitance, Ct Can be connected in series
4.0 ± 0.2
3.0 ± 0.2
Unit : mm
I Absolute Maximum Ratings Ta = 25°C
0.45 − 0.1
+ 0.2
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature
Symbol VR VRM IF IFM Tj Tstg
Rating 40 40 100 200 150 −55 to +150
Unit V V mA mA °C °C
1
2
3
1.27 1.27
2.54 ± 0.15
1 : Anode 2 : Cathode Anode 3 : Cathode New S-Type Package
Internal Connection
1
2
3
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Symbol IR VF VR Ct1*1 Ct2*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 3 and 2 *2 : Between pins 2 and 1 VR = 40 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz 40 5.5 3.0 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF
2.0 ± 0.2
marking
0.7 ± 0.1
15.6 ± 0.5
1
MA3V177
IF V F
103 Ta = 25°C
103
Switching Diodes
IF V F
Ta = 25°C
IR V R
102 Ta = 25°C
Forward current IF (mA)
Forward current IF (mA)
10 1 2 3
10 1 2 3
Reverse current IR (µA)
102
102
10
1
1 2 3 10−1 D1 (3-2)
1
1
10−1
0
0.4
0.8
1.2
1.6
2.0
10−1
0
0.4
0.8
1.2
1.6
2.0
10−2
D2 (2-1) 0 10 20 30 40 50
Forward voltage VF (V)
Forward voltage VF (V)
Reverse voltage VR (V)
IR VR
103 Ta = 125°C
VF Ta
1.2 1.2
VF Ta
1.0
1.0
Reverse current IR (µA...
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