PHB47NQ10T

PHB47NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 25 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC convertors „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 2 Ptot total power dissipation Tmb = 25 °C; see Figure 3 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 40 A; VDS = 80 V; Tj = 25 °C; see Figure 13 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 and 12 Min Typ Max Unit - - 100 V - - 47 A - - 166 W - 21 - nC - 20 28 mΩ NXP Semiconductors PHB47NQ10T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain [1] It is not possible to make a connection to pin 2. Simplified outline [1] mb 2 13 SOT404 (D2PAK) 3....