MA3X075E

Band Switching Diodes MA3X075E Silicon epitaxial planar type 2.8 − 0.3 + 0.2 Unit : mm 0.65 ± 0.15 For band switching I Features Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.65 ± 0.15 1.5 + 0.25 − 0.05 0.95 2.9 − 0.05 1.9 ± 0.2 + 0.2 1 3 2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.1 to 0.3 0.4 ± 0.2 1.1 Storage temperature Note) * : Maximum ambient temperature during operation Marking Symbol: M1Y Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1 1.2 0.85 Unit nA V pF Ω Note) 1 Each characteristic is a standard for individual diodes 2 Rated input/output frequency: 100 MHz 3. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.8 I Absolute Maximum Ratings Ta = 25°C 1 : Anode 1 2 : Anode 2 JEDEC : TO-236 3 : Cathode 1, 2 EIAJ : SC-59A Mini Type Package (3-pin) 0.16 − 0.06 + 0.2 − 0.1 + 0.1 0.4 − 0.05 + 0.1 1 MA3X075E IF  V F 103 Ta = 25°C 10 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C IR  T a 102 V...