MA3X152D

Switching Diodes MA3X152D Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 2.9 − 0.05 2 Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double VRM IF IFM IFSM Tj Tstg 80 100 150 225 340 500 750 150 −55 to +150 V mA mA 1 : Cathode 1 2 : Cathode 2 JEDEC : TO-236 3 : Anode 1,2 EIAJ : SC-59 Mini Type Package (3-pin) mA °C °C Marking Symbol: MO Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 15 10 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0 to 0.1 Reverse voltage (DC) VR 80 V 0.1 to 0.3 0.4 ± 0.2 0.8 Parameter Symbol Rating Unit 1.1 − 0.1 0.16 − 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25°C 0.4 − 0.05 Short reverse recovery time trr Small ter...