Document
Switching Diodes
MA3X153, MA3X153A
Silicon epitaxial planar type
For switching circuits I Features
• Small terminal capacitance, Ct • Two diodes are connected in series in the package
2.8 − 0.3 0.65 ± 0.15 1.5
+ 0.2
Unit : mm
0.65 ± 0.15
+ 0.25 − 0.05
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current
MA3X153 MA3X153A MA3X153 MA3X153A Single Series Single Series
VR VRM IF IFM Tj Tstg
40 80 40 80 100 65 200 130 150 −55 to +150
V
0.1 to 0.3 0.4 ± 0.2
V
mA
mA °C °C
Junction temperature Storage temperature
Marking Symbol • MA3X153 : MC • MA3X153A : MP Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA3X153 MA3X153A Forward voltage (DC) Reverse voltage (DC) MA3X153 MA3X153A Terminal capacitance Reverse recovery time Ct trr
*1
Symbol IR VF VR VR = 40 V VR = 75 V IF = 100 mA IR = 100 µA
Conditions
Min
0.8
Parameter
Symbol
Rating
Unit
1.1 − 0.1
1 : Anode 1 2 : Cathode 2 3 : Anode 2 JEDEC : TO-236 Cathode 1 EIAJ : SC-59 Mini Type Package (3-pin)
Typ
Max 0.1 0.1 1.2
0.16 − 0.06
+ 0.2
+ 0.1
I Absolute Maximum Ratings Ta = 25°C
0.4 − 0.05
+ 0.1
Unit µA V V
40 80
VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 150 9
5
pF ns ns
trr1*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 2 and 3 *2 : Between pins 1 and 3
1
MA3X153, MA3X153A
IF V F
103
D1 (1-3)
Switching Diodes
IF V F
Ta = 25°C 103
D2 (3-2)
IR V R
D2 (3-2) D1 (1-3) 102 Ta = 125°C
Ta = 25°C D1 (1-3)
103
3 102
Forward current IF (mA)
Forward current IF (mA)
102
1
3
2
Reverse current IR (µA)
1
2
D2 (3-2)
10
10
10
D1 (1-3) 1
3 D2 (3-2) 2
1
1
1
10−1
10−1
10−1 D1 (1-3) Ta = 25°C 0 0.2 0.4 0.6 0.8 1.0 1.2 10−2 0 10 20 30 D2 (3-2) 40 50
10−2
10−2 0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
Forward voltage VF (V)
Reverse voltage VR (V)
IR VR
1.0
D1 (1-3) 10 D2 (3-2) 1
3
VF Ta
1.0
VF Ta
Ta = 125°C
0.8
0.8
Reverse current IR (µA)
Forward voltage VF (V)
IF = 10 mA 0.6 3 mA 1 mA 0.4
3 D1 (1-3)
Forward voltage VF (V)
IF = 10 mA 3 mA 1 mA
3
0.6
10−1
D1 (1-3) 1 2
D2 (3-2)
0.1 mA
D2 (3-2)
0.4
1 2
10−2 Ta = 25°C 10−3 0 20 40 60
D1 (1-3) D2 (3-2)
0.1 mA
0.2
1
2
0.2
80
100
0 −40
0
40
80
120
160
0 −40
0
40
80
120
160
Reverse voltage VR (V)
Ambient temperature Ta
(°C)
Ambient temperature Ta (°C)
IR Ta
102 3 D1 (1-3) 10 D2 (3-2) 1 2 VR = 80 V 80 V 40 V 10−1 D2 (3-2) 40 V
3 D1 (1-3)
IR T a
103 VR = 40 V D1 (1-3)
D2 (3-2) 1 2
Ct VR
f = 1 MHz Ta = 25°C 5
Terminal capacitance Ct (pF)
102
Reverse current IR (nA)
Reverse current IR (µA)
3 2
D1 (1-3) 1
3 D2 (3-2) 2
1
D1 (1-3)
10
D2 (3-2) 1
1
D2 (3-2)
0.5 0.3 0.2
D1 (1-3)
10−2
10−1
10−3
−40
10−2
0
40
80
120
−40
0
40
80
120
0.1
0
10
20
30
40
50
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
2
.