Silicon epitaxial planar type Switching Diodes
Switching Diodes
MA3X157A
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65 ± 0.15
2.8 − 0.3 1.5 − ...
Description
Switching Diodes
MA3X157A
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65 ± 0.15
2.8 − 0.3 1.5 − 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
0.95
High switching speed Small terminal capacitance, Ct Both chips have even characteristics Can be connected in series
1.9 ± 0.2
2.9 − 0.05
+ 0.2
I Features
1 3 2
0.95
1.45 0 to 0.1
1.1 − 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFRM Symbol VR VRM IF Rating 80 80 100 65 225 145 500 325 150 −55 to +150 °C °C mA mA Unit V V mA
0.1 to 0.3 0.4 ± 0.2
1 : Anode 1 2 : Cathode 2 3 : Anode 2 JEDEC : TO-236 Cathode 1 EIAJ : SC-59 Mini Type Package (3-pin)
Marking Symbol: MS Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) ...
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